13N110A PDF and Equivalents Search

 

13N110A Specs and Replacement

Type Designator: 13N110A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm

Package: TO-247AD

13N110A substitution

- MOSFET ⓘ Cross-Reference Search

 

13N110A datasheet

 ..1. Size:49K  ixys
 13n110a.pdf pdf_icon

13N110A

IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52 ... See More ⇒

 8.1. Size:46K  ixys
 ixth13n110.pdf pdf_icon

13N110A

IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52 ... See More ⇒

Detailed specifications: 10N80B, 10N90A, 11N10, 11N10G, 11P50A, 12N50A, 12N60A, 12N60AF, 2N60, 13N60A, 13N60AF, 16N60A, 16N60AF, 16N60B, 19MT050XFAPBF, 1HN04CH, 1HP04CH

Keywords - 13N110A MOSFET specs

 13N110A cross reference

 13N110A equivalent finder

 13N110A pdf lookup

 13N110A substitution

 13N110A replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.