All MOSFET. 13N110A Datasheet

 

13N110A MOSFET. Datasheet pdf. Equivalent


   Type Designator: 13N110A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 195 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm
   Package: TO-247AD

 13N110A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

13N110A Datasheet (PDF)

 ..1. Size:49K  ixys
 13n110a.pdf

13N110A 13N110A

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

 8.1. Size:46K  ixys
 ixth13n110.pdf

13N110A 13N110A

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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