All MOSFET. 13N110A Datasheet

 

13N110A Datasheet and Replacement


   Type Designator: 13N110A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.92 Ohm
   Package: TO-247AD
 

 13N110A substitution

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13N110A Datasheet (PDF)

 ..1. Size:49K  ixys
 13n110a.pdf pdf_icon

13N110A

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

 8.1. Size:46K  ixys
 ixth13n110.pdf pdf_icon

13N110A

IXTH 13N110 VDSS = 1100 VMegaMOSTMFET ID25 = 13 ARDS(on) = 0.92 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 1100 VVGS Continuous 20 VD (TAB)VGSM Transient 30 VID25 TC = 25C13 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 52

Datasheet: 10N80B , 10N90A , 11N10 , 11N10G , 11P50A , 12N50A , 12N60A , 12N60AF , IRF830 , 13N60A , 13N60AF , 16N60A , 16N60AF , 16N60B , 19MT050XFAPBF , 1HN04CH , 1HP04CH .

History: SW2N60B

Keywords - 13N110A MOSFET datasheet

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