1HP04CH Specs and Replacement
Type Designator: 1HP04CH
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 2.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 18 Ohm
Package: SOT-23
1HP04CH substitution
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1HP04CH datasheet
1hp04ch.pdf
Ordering number EN*A0926A 1HP04CH Advance Information http //onsemi.com P-Channel Small Signal MOSFET 100V, 170mA, 18 , Single CPH3 Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage V... See More ⇒
Detailed specifications: 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF, 16N60B, 19MT050XFAPBF, 1HN04CH, 7N60, 1N60AF, 1N60E, 1N60F, 1N60G, 20N50B, 20N60A, 24N50A, 24N50B
Keywords - 1HP04CH MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AOD3N80 | HY3408APM
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