1HP04CH Datasheet and Replacement
Type Designator: 1HP04CH
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 2.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 18 Ohm
Package: SOT-23
1HP04CH substitution
1HP04CH Datasheet (PDF)
1hp04ch.pdf

Ordering number : EN*A0926A 1HP04CH Advance Information http://onsemi.com P-Channel Small Signal MOSFET 100V, 170mA, 18, Single CPH3 Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage V
Datasheet: 13N110A , 13N60A , 13N60AF , 16N60A , 16N60AF , 16N60B , 19MT050XFAPBF , 1HN04CH , IRF830 , 1N60AF , 1N60E , 1N60F , 1N60G , 20N50B , 20N60A , 24N50A , 24N50B .
History: WMS090N04LG2 | 2SK1339
Keywords - 1HP04CH MOSFET datasheet
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History: WMS090N04LG2 | 2SK1339



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