24N50A MOSFET Datasheet: N-Ch, 500V, 24A. Full specification with pinout and replacement list

24N50A Specs and Replacement

Type Designator: 24N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: LCC

24N50A substitution

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24N50A datasheet

..1. Size:34K microsemi
24n50a.pdf pdf_icon

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode 24 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 230 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNE... See More ⇒

0.1. Size:990K jilin sino
jcs24n50wh jcs24n50abh.pdf pdf_icon

N N- CHANNEL MOSFET R JCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

0.2. Size:631K feihonltd
fha24n50a.pdf pdf_icon

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0.3. Size:4754K first semi
fir24n50aptg.pdf pdf_icon

FIR24N50APTG High Voltage N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge 90 nC (Typ.) g Schematic dia ram BVDSS=500V,ID=24A D Lower RDS(on) 0.2 (Max) @VG=10V G 100% Avalanche Tested S Marking Diagram Y = Year A = Assembly Location... See More ⇒