24N50A - описание и поиск аналогов

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode 24 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 230 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance N-CHANNE

N N- CHANNEL MOSFET R JCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

FIR24N50APTG High Voltage N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge 90 nC (Typ.) g Schematic dia ram BVDSS=500V,ID=24A D Lower RDS(on) 0.2 (Max) @VG=10V G 100% Avalanche Tested S Marking Diagram Y = Year A = Assembly Location

HM24N50A 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 25A, 500V, RDS(on)typ. = 167m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 96nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance