BCS4N10 PDF and Equivalents Search

 

BCS4N10 Specs and Replacement

Type Designator: BCS4N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-257F

BCS4N10 substitution

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BCS4N10 datasheet

 ..1. Size:109K  china
 bcs4n10.pdf pdf_icon

BCS4N10

BCS4N10 PD TC=25 14 W ID TC=25 4 A VGS 20 V Tjm +150 Tstg -55 +155 BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3.8A 0.55 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=15V,IDS=3.8A(N)IDS=4.1A(P) 1.2 S IDSS VDS=... See More ⇒

Detailed specifications: 20N50B, 20N60A, 24N50A, 24N50B, 24N50C, 2MI50S-050, 30N20A, 38N10A, AO4407A, BFC60, BFD63, BFD71, BFD77, BFD82, BFD88, BLM138K, BLM2301

Keywords - BCS4N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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