All MOSFET. BCS4N10 Datasheet

 

BCS4N10 Datasheet and Replacement


   Type Designator: BCS4N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-257F
 

 BCS4N10 substitution

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BCS4N10 Datasheet (PDF)

 ..1. Size:109K  china
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BCS4N10

BCS4N10 PD TC=25 14 W ID TC=25 4 A VGS 20 V Tjm +150 Tstg -55 +155 BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3.8A 0.55 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=15V,IDS=3.8A(N)IDS=4.1A(P) 1.2 S IDSS VDS=

Datasheet: 20N50B , 20N60A , 24N50A , 24N50B , 24N50C , 2MI50S-050 , 30N20A , 38N10A , AO3407 , BFC60 , BFD63 , BFD71 , BFD77 , BFD82 , BFD88 , BLM138K , BLM2301 .

History: IRL60B216 | IRHNA57260

Keywords - BCS4N10 MOSFET datasheet

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