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BFD63 Specs and Replacement

Type Designator: BFD63

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-204AA

BFD63 substitution

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BFD63 datasheet

 ..1. Size:18K  semelab
 bfd63.pdf pdf_icon

BFD63

BFD63 SEME LAB 4TH GENERATION MOSFET TO 3 (TO 204AA) Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) ENHANCEMENT MODE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) HIGH VOLTAGE POWER MOSFETS VDSS 1000V 1 2 ID(cont) 6.0A 3 (case) 3.84 (0.151) 4.09 (0.161) RDS(on) 2.00 7.92 (0.312) 12.70 (0.50) Pin 1 G... See More ⇒

Detailed specifications: 24N50A, 24N50B, 24N50C, 2MI50S-050, 30N20A, 38N10A, BCS4N10, BFC60, IRFP064N, BFD71, BFD77, BFD82, BFD88, BLM138K, BLM2301, BLM2302, BLM2305

Keywords - BFD63 MOSFET specs

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