BFD63 MOSFET. Datasheet pdf. Equivalent
Type Designator: BFD63
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO-204AA
BFD63 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BFD63 Datasheet (PDF)
..1. Size:18K semelab
bfd63.pdf
bfd63.pdf
BFD63SEMELAB4TH GENERATION MOSFETTO3 (TO204AA) Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42) ENHANCEMENT MODE11.18 (0.44) 1.52 (0.06)3.43 (0.135)HIGH VOLTAGEPOWER MOSFETSVDSS 1000V1 2ID(cont) 6.0A3(case)3.84 (0.151)4.09 (0.161)RDS(on) 2.007.92 (0.312)12.70 (0.50)Pin 1 G
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
