BLM4435 MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM4435
Marking Code: 4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
BLM4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM4435 Datasheet (PDF)
blm4435.pdf
Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS DR
blm4407.pdf
Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFV18N60PS
History: IXFV18N60PS
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