BLM4435 Specs and Replacement
Type Designator: BLM4435
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
BLM4435 substitution
- MOSFET ⓘ Cross-Reference Search
BLM4435 datasheet
blm4435.pdf
Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS D R ... See More ⇒
blm4407.pdf
Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION G The BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) S voltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS D R ... See More ⇒
Detailed specifications: BLM2302, BLM2305, BLM3400, BLM3401, BLM3401A, BLM3407, BLM3407A, BLM3415, IRLZ44N, BLM4953, BLM4953A, BLM7002, BLM7002K, BLM8205, BLM8205A, BLM9435, BLM9435A
Keywords - BLM4435 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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