BLM4435 Datasheet and Replacement
Type Designator: BLM4435
Marking Code: 4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
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BLM4435 Datasheet (PDF)
blm4435.pdf

Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS DR
blm4407.pdf

Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS DR
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: CHM1710PAGP | AP03N70H | RFM15N12 | KX3N80
Keywords - BLM4435 MOSFET datasheet
BLM4435 cross reference
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History: CHM1710PAGP | AP03N70H | RFM15N12 | KX3N80



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