BLM4435 Datasheet and Replacement
Type Designator: BLM4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP-8
BLM4435 substitution
BLM4435 Datasheet (PDF)
blm4435.pdf

Pb Free Product BLM4435 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4435 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -10A DS DR
blm4407.pdf

Pb Free Product BLM4407 P-Channel Enhancement Mode Power MOSFET DDESCRIPTION GThe BLM4407 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)Svoltages as low as 4.5V. Schematic diagram GENERAL FEATURES V = -30V,I = -12A DS DR
Datasheet: BLM2302 , BLM2305 , BLM3400 , BLM3401 , BLM3401A , BLM3407 , BLM3407A , BLM3415 , IRFP260N , BLM4953 , BLM4953A , BLM7002 , BLM7002K , BLM8205 , BLM8205A , BLM9435 , BLM9435A .
History: GKI03080
Keywords - BLM4435 MOSFET datasheet
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History: GKI03080



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