All MOSFET. BLM4953 Datasheet

 

BLM4953 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM4953
   Marking Code: 4953
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP-8

 BLM4953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM4953 Datasheet (PDF)

 ..1. Size:939K  belling
 blm4953.pdf

BLM4953 BLM4953

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D 1 D 2 The BLM4953 uses advanced trench technology to prov ide excellent R , low gate charge and operation with gate DS(ON)G 1 G 2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = -30V,ID

 0.1. Size:273K  belling
 blm4953a.pdf

BLM4953 BLM4953

Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1D2The BLM4953A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)G1 G2voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS

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