BLM4953 Datasheet. Specs and Replacement

Type Designator: BLM4953  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOP-8

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BLM4953 datasheet

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BLM4953

Pb Free Product BLM4953 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D 1 D 2 The BLM4953 uses advanced trench technology to prov ide excellent R , low gate charge and operation with gate DS(ON) G 1 G 2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES VDS = -30V,ID ... See More ⇒

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BLM4953

Pb Free Product BLM4953A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D1 D2 The BLM4953A uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) G1 G2 voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2 Schematic diagram GENERAL FEATURES V = -30V,I = -5.3A DS... See More ⇒

Detailed specifications: BLM2305, BLM3400, BLM3401, BLM3401A, BLM3407, BLM3407A, BLM3415, BLM4435, IRFB4110, BLM4953A, BLM7002, BLM7002K, BLM8205, BLM8205A, BLM9435, BLM9435A, BLM9926

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