BLM9926 Datasheet and Replacement
Type Designator: BLM9926
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP-8
BLM9926 substitution
BLM9926 Datasheet (PDF)
blm9926.pdf

Pb Free ProductBLM9926N-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =20V,ID =6A Schematic diagram RDS(ON)
Datasheet: BLM4953 , BLM4953A , BLM7002 , BLM7002K , BLM8205 , BLM8205A , BLM9435 , BLM9435A , AON6414A , 20N15 , 25N40A , 2SJ126 , 2SK1105 , 2SK1917-M , 2SK1938-01 , 2SK1939-01 , 2SK1982-01M .
History: LNN06R140
Keywords - BLM9926 MOSFET datasheet
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History: LNN06R140



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