All MOSFET. FMV09N70E Datasheet

 

FMV09N70E Datasheet and Replacement


   Type Designator: FMV09N70E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220F
 

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FMV09N70E Datasheet (PDF)

 ..1. Size:240K  inchange semiconductor
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FMV09N70E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMV09N70EFEATURESdrain-source on-resistance:RDS(on) 1.4 (max)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:454K  fuji
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FMV09N70E

FMV09N90E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseTO-220F(SLS)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.00.

Datasheet: BUK444-600A , BUK444-600B , BUK445-100A , BUK445-100B , BUK445-400A , BUK445-400B , BUK445-600A , BUK445-600B , P0903BDG , FRK250 , FRM230 , FRM240 , IPP015N04N , IPP023NE7N3 , IPP024N06N3 , IPP030N10N3 , IPP032N06N3 .

History: IXFA36N20X3 | ME04N25G

Keywords - FMV09N70E MOSFET datasheet

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