FMV09N70E Specs and Replacement
Type Designator: FMV09N70E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-220F
FMV09N70E substitution
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FMV09N70E datasheet
fmv09n70e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV09N70E FEATURES drain-source on-resistance RDS(on) 1.4 (max) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒
fmv09n90e.pdf
FMV09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.0 0.... See More ⇒
Detailed specifications: BUK444-600A, BUK444-600B, BUK445-100A, BUK445-100B, BUK445-400A, BUK445-400B, BUK445-600A, BUK445-600B, IRF1407, FRK250, FRM230, FRM240, IPP015N04N, IPP023NE7N3, IPP024N06N3, IPP030N10N3, IPP032N06N3
Keywords - FMV09N70E MOSFET specs
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FMV09N70E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SP8009 | 8N06D
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