SFW2955 Datasheet. Specs and Replacement

Type Designator: SFW2955  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO263

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SFW2955 datasheet

 ..1. Size:251K  fairchild semi
 sfi2955 sfw2955.pdf pdf_icon

SFW2955

SFW/I2955 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.4 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -60V Low RDS(ON) 0.22 (Typ.) 1 1 2 3 3 1. Gate 2. Drai... See More ⇒

Detailed specifications: SFU9110, SFU9120, SFU9130, SFU9210, SFU9214, SFU9220, SFU9224, SFU9310, IRFB4115, SFW9510, SFW9520, SFW9530, SFW9540, SFW9610, SFW9614, SFW9620, SFW9624

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