SFW2955 Datasheet and Replacement
Type Designator: SFW2955
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO263
SFW2955 substitution
SFW2955 Datasheet (PDF)
sfi2955 sfw2955.pdf

SFW/I2955Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.4 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.22 (Typ.)112331. Gate 2. Drai
Datasheet: SFU9110 , SFU9120 , SFU9130 , SFU9210 , SFU9214 , SFU9220 , SFU9224 , SFU9310 , IRFP250N , SFW9510 , SFW9520 , SFW9530 , SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 .
History: IPB12CNE8NG | IPB120N06NG | TSM55N03CP
Keywords - SFW2955 MOSFET datasheet
SFW2955 cross reference
SFW2955 equivalent finder
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History: IPB12CNE8NG | IPB120N06NG | TSM55N03CP



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