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TK3A90E Specs and Replacement

Type Designator: TK3A90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: TO-220F

TK3A90E substitution

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TK3A90E datasheet

 ..1. Size:385K  toshiba
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TK3A90E

TK3A90E MOSFETs Silicon N-Channel MOS ( -MOS ) TK3A90E TK3A90E TK3A90E TK3A90E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 3.7 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 720 V) (3) Enhancement mode Vth = 2.... See More ⇒

 ..2. Size:239K  inchange semiconductor
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TK3A90E

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Detailed specifications: TK17A65W5, TK17E80W, TK19A50W, TK22A65X5, TK290A60Y, TK290A65Y, TK380A60Y, TK380A65Y, IRFB4115, TK3R1A04PL, TK3R3A06PL, TK3R3E03GL, TK4A80E, TK4R3A06PL, TK4R3E06PL, TK560A60Y, TK560A65Y

Keywords - TK3A90E MOSFET specs

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