TK3A90E MOSFET. Datasheet pdf. Equivalent
Type Designator: TK3A90E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
Package: TO-220F
TK3A90E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK3A90E Datasheet (PDF)
tk3a90e.pdf
TK3A90EMOSFETs Silicon N-Channel MOS (-MOS)TK3A90ETK3A90ETK3A90ETK3A90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance : RDS(ON) = 3.7 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode : Vth = 2.
tk3a90e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK3A90EITK3A90EFEATURESLow drain-source on-resistance:RDS(on) 4.6.Enhancement mode:Vth = 2.5 to4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK1143
