All MOSFET. TK3A90E Datasheet

 

TK3A90E Datasheet and Replacement


   Type Designator: TK3A90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO-220F
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TK3A90E Datasheet (PDF)

 ..1. Size:385K  toshiba
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TK3A90E

TK3A90EMOSFETs Silicon N-Channel MOS (-MOS)TK3A90ETK3A90ETK3A90ETK3A90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance : RDS(ON) = 3.7 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode : Vth = 2.

 ..2. Size:239K  inchange semiconductor
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TK3A90E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK3A90EITK3A90EFEATURESLow drain-source on-resistance:RDS(on) 4.6.Enhancement mode:Vth = 2.5 to4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

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History: SIR846ADP | HLML6401 | IXTA200N085T7 | SM6A25NSUB | C2M1000170J | SSF1006H | AP85T03GH-HF

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