TK3R1A04PL Specs and Replacement
Type Designator: TK3R1A04PL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 82 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-220F
TK3R1A04PL substitution
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TK3R1A04PL datasheet
tk3r1a04pl.pdf
TK3R1A04PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK3R1A04PL TK3R1A04PL TK3R1A04PL TK3R1A04PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 17.5 nC (typ.) (3) Small o... See More ⇒
tk3r1a04pl.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK3R1A04PL ITK3R1A04PL FEATURES Low drain-source on-resistance RDS(ON) = 2.5m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL... See More ⇒
Detailed specifications: TK17E80W, TK19A50W, TK22A65X5, TK290A60Y, TK290A65Y, TK380A60Y, TK380A65Y, TK3A90E, 2N7000, TK3R3A06PL, TK3R3E03GL, TK4A80E, TK4R3A06PL, TK4R3E06PL, TK560A60Y, TK560A65Y, TK5A90E
Keywords - TK3R1A04PL MOSFET specs
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History: IRLML2060
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