All MOSFET. TK3R1A04PL Datasheet

 

TK3R1A04PL MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK3R1A04PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 82 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63.4 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO-220F

 TK3R1A04PL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK3R1A04PL Datasheet (PDF)

 ..1. Size:433K  toshiba
 tk3r1a04pl.pdf

TK3R1A04PL TK3R1A04PL

TK3R1A04PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK3R1A04PLTK3R1A04PLTK3R1A04PLTK3R1A04PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 17.5 nC (typ.)(3) Small o

 ..2. Size:253K  inchange semiconductor
 tk3r1a04pl.pdf

TK3R1A04PL TK3R1A04PL

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK3R1A04PLITK3R1A04PLFEATURESLow drain-source on-resistance:RDS(ON) = 2.5m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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