All MOSFET. TK5A90E Datasheet

 

TK5A90E Datasheet and Replacement


   Type Designator: TK5A90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.1 Ohm
   Package: TO-220F
 

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TK5A90E Datasheet (PDF)

 ..1. Size:389K  toshiba
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TK5A90E

TK5A90EMOSFETs Silicon N-Channel MOS (-MOS)TK5A90ETK5A90ETK5A90ETK5A90E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance : RDS(ON) = 2.5 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 720 V)(3) Enhancement mode : Vth = 2.

 ..2. Size:239K  inchange semiconductor
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TK5A90E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK5A90EITK5A90EFEATURESLow drain-source on-resistance:RDS(on) 3.1.Enhancement mode:Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , IRFP260 , TK5R1E06PL , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M .

History: IPDD60R125G7 | STG8820 | FQU4N50TUWS | STB60NF06LT4 | SSP80R240SFD | IRFS4321 | UTT108N03

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