All MOSFET. TK5R1E06PL Datasheet

 

TK5R1E06PL Datasheet and Replacement


   Type Designator: TK5R1E06PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm
   Package: TO220
 

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TK5R1E06PL Datasheet (PDF)

 ..1. Size:477K  toshiba
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TK5R1E06PL

TK5R1E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK5R1E06PLTK5R1E06PLTK5R1E06PLTK5R1E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 11 nC (typ.)(3) Small out

 ..2. Size:245K  inchange semiconductor
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TK5R1E06PL

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK5R1E06PLITK5R1E06PLFEATURESLow drain-source on-resistance:RDS(on) 5.1m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

Datasheet: TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , TK5A90E , 12N60 , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B .

History: WMP08N70EM | 2N4416AC1C

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