All MOSFET. TK7E80W Datasheet

 

TK7E80W Datasheet and Replacement


   Type Designator: TK7E80W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220
 

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TK7E80W Datasheet (PDF)

 ..1. Size:451K  toshiba
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TK7E80W

TK7E80WMOSFETs Silicon N-Channel MOS (DTMOS)TK7E80WTK7E80WTK7E80WTK7E80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.795 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhanceme

 ..2. Size:246K  inchange semiconductor
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TK7E80W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK7E80WITK7E80WFEATURESLow drain-source on-resistance:RDS(on) 0.95.Enhancement mode:Vth =3.0 to 4.0V (VDS = 10 V, ID=0.28mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: TK4A80E , TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , TK5A90E , TK5R1E06PL , TK5R3A06PL , IRF1010E , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS , HY3810PM .

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