HY3810PM Datasheet and Replacement
Type Designator: HY3810PM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 346 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1013 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-3PM
HY3810PM substitution
HY3810PM Datasheet (PDF)
hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf
HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
hy3810.pdf
HY3810P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin DescriptionFeatures 100V/180ARDS(ON)= 5.0 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsA TO-3PS-3L TO-3PM-3SSwitching application
Datasheet: TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS , IRF9540N , HY3906P , HY3906B , HYG067N07NQ1P , HYG067N07NQ1B , HYG067N07NQ1PS , IPP07N03L , IPB07N03L , IPW60R060P7 .
History: IRFZ48S
Keywords - HY3810PM MOSFET datasheet
HY3810PM cross reference
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History: IRFZ48S
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