HY3810PM Datasheet. Specs and Replacement

Type Designator: HY3810PM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 346 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 1013 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-3PM

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HY3810PM datasheet

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 hy3810p hy3810m hy3810b hy3810ps hy3810pm.pdf pdf_icon

HY3810PM

HY3810P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/180A RDS(ON)= 5.0 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PM-3S Switching application ... See More ⇒

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 hy3810.pdf pdf_icon

HY3810PM

HY3810P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description F eatures 100V/180A RDS(ON)= 5.0 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PM-3S Switching application ... See More ⇒

Detailed specifications: TK7E80W, TK8R2A06PL, TK8R2E06PL, FS5KM-10A, HY3810P, HY3810M, HY3810B, HY3810PS, IRLB4132, HY3906P, HY3906B, HYG067N07NQ1P, HYG067N07NQ1B, HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7

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