SVF4N65M Datasheet and Replacement
Type Designator: SVF4N65M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37.33 nS
Cossⓘ - Output Capacitance: 54 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO-251
SVF4N65M substitution
SVF4N65M Datasheet (PDF)
svf4n65f svf4n65mj svf4n65m svf4n65dtr.pdf
SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.
svf4n65f svf4n65m svf4n65mj svf4n65d.pdf
SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC
svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS
svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13
Datasheet: HYG067N07NQ1B , HYG067N07NQ1PS , IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , AON7506 , VP0300M , CEPF630 , CEBF630 , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 .
Keywords - SVF4N65M MOSFET datasheet
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