SVF4N65M PDF and Equivalents Search

 

SVF4N65M Specs and Replacement

Type Designator: SVF4N65M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.33 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO-251

SVF4N65M substitution

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SVF4N65M datasheet

 ..4. Size:620K  silan
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SVF4N65M

SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3 ... See More ⇒

Detailed specifications: HYG067N07NQ1B, HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, AON7506, VP0300M, CEPF630, CEBF630, CS64N12, CSN64N12, D7509, FD7509, ID7509

Keywords - SVF4N65M MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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