All MOSFET. VP0300M Datasheet

 

VP0300M Datasheet and Replacement


   Type Designator: VP0300M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 20 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-237
      - MOSFET Cross-Reference Search

 

VP0300M Datasheet (PDF)

 ..1. Size:85K  siliconix
 vp0300m.pdf pdf_icon

VP0300M

 8.1. Size:50K  vishay
 vp0300l-ls vq2001j-p.pdf pdf_icon

VP0300M

VP0300L/LS, VQ2001J/PVishay SiliconixP-Channel 30-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VP0300L 2.5 @ VGS = 12 V 2 to 4.5 0.32VP0300LS 2.5 @ VGS = 12 V 2 to 4.5 0.530VQ2001J 2 @ VGS = 12 V 2 to 4.5 0.6VQ2001P 2 @ VGS = 12 V 2 to 4.5 0.6FEATURES BENEFITS APPLICATIONSD H

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: INK0002AC1 | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS

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