VP0300M PDF and Equivalents Search

 

VP0300M Specs and Replacement

Type Designator: VP0300M

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

ton ⓘ - Turn-on Time: 20 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-237

VP0300M substitution

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VP0300M datasheet

 ..1. Size:85K  siliconix
 vp0300m.pdf pdf_icon

VP0300M

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 8.1. Size:50K  vishay
 vp0300l-ls vq2001j-p.pdf pdf_icon

VP0300M

VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = 12 V 2 to 4.5 0.32 VP0300LS 2.5 @ VGS = 12 V 2 to 4.5 0.5 30 VQ2001J 2 @ VGS = 12 V 2 to 4.5 0.6 VQ2001P 2 @ VGS = 12 V 2 to 4.5 0.6 FEATURES BENEFITS APPLICATIONS D H... See More ⇒

Detailed specifications: HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M, STP80NF70, CEPF630, CEBF630, CS64N12, CSN64N12, D7509, FD7509, ID7509, ED7509

Keywords - VP0300M MOSFET specs

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