All MOSFET. VP0300M Datasheet

 

VP0300M Datasheet and Replacement


   Type Designator: VP0300M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 20 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-237
 

 VP0300M substitution

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VP0300M Datasheet (PDF)

 ..1. Size:85K  siliconix
 vp0300m.pdf pdf_icon

VP0300M

 8.1. Size:50K  vishay
 vp0300l-ls vq2001j-p.pdf pdf_icon

VP0300M

VP0300L/LS, VQ2001J/PVishay SiliconixP-Channel 30-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VP0300L 2.5 @ VGS = 12 V 2 to 4.5 0.32VP0300LS 2.5 @ VGS = 12 V 2 to 4.5 0.530VQ2001J 2 @ VGS = 12 V 2 to 4.5 0.6VQ2001P 2 @ VGS = 12 V 2 to 4.5 0.6FEATURES BENEFITS APPLICATIONSD H

Datasheet: HYG067N07NQ1PS , IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , SVF4N65M , 20N50 , CEPF630 , CEBF630 , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 .

History: HB3710P | NCEP028N60AGU | BUK454-200A | STP130N6F7 | PSA10N65C | SUD08P06-155 | IRL7486MTRPBF

Keywords - VP0300M MOSFET datasheet

 VP0300M cross reference
 VP0300M equivalent finder
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