CEBF630 PDF and Equivalents Search

 

CEBF630 Specs and Replacement

Type Designator: CEBF630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-263

CEBF630 substitution

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CEBF630 datasheet

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 cepf630 cebf630.pdf pdf_icon

CEBF630

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 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEBF630

CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45 8.1A 10V CEBF634 250V 0.45 8.1A 10V CEIF634 250V 0.45 8.1A 10V CEFF634 250V 0.45 8.1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-... See More ⇒

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEBF630

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15 19A 10V CEBF640 200V 0.15 19A 10V CEFF640 200V 0.15 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. ... See More ⇒

Detailed specifications: IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M, VP0300M, CEPF630, TK10A60D, CS64N12, CSN64N12, D7509, FD7509, ID7509, ED7509, DFF2N60, NCE60H10F

Keywords - CEBF630 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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