All MOSFET. CEBF630 Datasheet

 

CEBF630 Datasheet and Replacement


   Type Designator: CEBF630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-263
 

 CEBF630 substitution

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CEBF630 Datasheet (PDF)

 ..1. Size:512K  cet
 cepf630 cebf630.pdf pdf_icon

CEBF630

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 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEBF630

CEPF634/CEBF634CEIF634/CEFF634N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF634 250V 0.45 8.1A 10VCEBF634 250V 0.45 8.1A 10VCEIF634 250V 0.45 8.1A 10VCEFF634 250V 0.45 8.1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEBF630

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

Datasheet: IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , SVF4N65M , VP0300M , CEPF630 , IRFZ24N , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F .

History: FQP7N40 | IRF7530 | IRF5803TRPBF | NTMFS5C604NL | 2SK1198 | SW4N60A | SWF18N65D

Keywords - CEBF630 MOSFET datasheet

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