All MOSFET. CS64N12 Datasheet

 

CS64N12 Datasheet and Replacement


   Type Designator: CS64N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO-220
 

 CS64N12 substitution

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CS64N12 Datasheet (PDF)

 ..1. Size:603K  cass
 cs64n12 csn64n12.pdf pdf_icon

CS64N12

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)

 9.1. Size:896K  thinkisemi
 cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N12

CS64N90 PbCS64N90Pb Free Plating Product85V,92A N-Channel Trench Process Power MOSFETGeneral Description CS64N90(TO-220 HeatSink)CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS GFea

Datasheet: IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG , SVF4N65M , VP0300M , CEPF630 , CEBF630 , P60NF06 , CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P .

History: SIF12N60C | IPP80N06S4L-07 | NTMFS6B05NT3G | WML12N65D1 | FQB60N03L | IRFSL4510 | OSG50R1K5FF

Keywords - CS64N12 MOSFET datasheet

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