CS64N12 MOSFET Datasheet: N-Ch, 82V, 120A. Full specification with pinout and replacement list

CS64N12 Specs and Replacement

Type Designator: CS64N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 463 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO-220

CS64N12 substitution

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CS64N12 datasheet

..1. Size:603K cass
cs64n12 csn64n12.pdf pdf_icon

CS64N12 CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)... See More ⇒

9.1. Size:896K thinkisemi
cs64n90f cs64n90 cs64n90b.pdf pdf_icon

CS64N90 Pb CS64N90 Pb Free Plating Product 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 (TO-220 HeatSink) CS64N90 series is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒

Detailed specifications: IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M, VP0300M, CEPF630, CEBF630, AO4407, CSN64N12, D7509, FD7509, ID7509, ED7509, DFF2N60, NCE60H10F, STK0760P