CSN64N12 Specs and Replacement
Type Designator: CSN64N12
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 463 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: TO-220N
CSN64N12 substitution
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CSN64N12 datasheet
cs64n12 csn64n12.pdf
CS64N12 CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)... See More ⇒
Detailed specifications: SVF4N65T, SVF4N65F, SVF4N65FG, SVF4N65M, VP0300M, CEPF630, CEBF630, CS64N12, BS170, D7509, FD7509, ID7509, ED7509, DFF2N60, NCE60H10F, STK0760P, TPC8228H
Keywords - CSN64N12 MOSFET specs
CSN64N12 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WML18N70EM | WMM38N60C2
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