All MOSFET. CSN64N12 Datasheet

 

CSN64N12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CSN64N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 139 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO-220N

 CSN64N12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CSN64N12 Datasheet (PDF)

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 cs64n12 csn64n12.pdf

CSN64N12 CSN64N12

CS64N12\ CSN64N12 N-Channel Trench Power MOSFET General Description The 64N12 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features VDS=82V; ID=120A@ VGS=10V; RDS(ON)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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