ID7509 MOSFET Datasheet: N-Ch, 75V, 80A. Full specification with pinout and replacement list

ID7509 Specs and Replacement

Type Designator: ID7509

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 373 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO-262

ID7509 substitution

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ID7509 datasheet

..1. Size:912K china
d7509 fd7509 id7509 ed7509.pdf pdf_icon

D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS V DS = 75V Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with R 6.7m DS(on) TYP) = the RoHS standard. I = 80A D 2 Features Low On Resistance Low Gate Charge Fast Switching ... See More ⇒

..2. Size:1010K cn wxdh
d7509 fd7509 id7509 ed7509.pdf pdf_icon

D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 75V Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with G RDS = 6.7m (on) (TYP) the RoHS standard. 1 3 S ID = 80A 2 Features Low On Resistance Low Gate Charge Fast Swit... See More ⇒

Detailed specifications: SVF4N65M, VP0300M, CEPF630, CEBF630, CS64N12, CSN64N12, D7509, FD7509, IRF1407, ED7509, DFF2N60, NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, BLV108