All MOSFET. ED7509 Datasheet

 

ED7509 Datasheet and Replacement


   Type Designator: ED7509
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 373 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-263
 

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ED7509 Datasheet (PDF)

 ..1. Size:912K  china
 d7509 fd7509 id7509 ed7509.pdf pdf_icon

ED7509

D7509/FD7509/ID7509/ED750980A 75V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETSVDS = 75VUsed advanced trench technology design, providedexcellent RDSON and low gate charge. Which accords withR 6.7mDS(on) TYP) =the RoHS standard.I = 80AD2 Features Low On Resistance Low Gate Charge Fast Switching

 ..2. Size:1010K  cn wxdh
 d7509 fd7509 id7509 ed7509.pdf pdf_icon

ED7509

D7509/FD7509/ID7509/ED750980A 75V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 75VUsed advanced trench technology design, providedexcellent RDSON and low gate charge. Which accords withG RDS = 6.7m(on) (TYP)the RoHS standard.13 S ID = 80A2 Features Low On Resistance Low Gate Charge Fast Swit

Datasheet: VP0300M , CEPF630 , CEBF630 , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 , 5N65 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 .

History: TPB120R800A | VN1210N1 | SFG100N10GF | STB9NK60ZD | HITK0204MP | FCB20N60F085 | IRFHM8342

Keywords - ED7509 MOSFET datasheet

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