ED7509 MOSFET. Datasheet pdf. Equivalent
Type Designator: ED7509
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 373 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO-263
ED7509 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ED7509 Datasheet (PDF)
..1. Size:912K china
d7509 fd7509 id7509 ed7509.pdf
d7509 fd7509 id7509 ed7509.pdf
D7509/FD7509/ID7509/ED750980A 75V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETSVDS = 75VUsed advanced trench technology design, providedexcellent RDSON and low gate charge. Which accords withR 6.7mDS(on) TYP) =the RoHS standard.I = 80AD2 Features Low On Resistance Low Gate Charge Fast Switching
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
