All MOSFET. DFF2N60 Datasheet

 

DFF2N60 Datasheet and Replacement


   Type Designator: DFF2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO-220F
 

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DFF2N60 Datasheet (PDF)

 ..1. Size:701K  di semiconductor
 dff2n60.pdf pdf_icon

DFF2N60

www.DataSheet4U.comDFF2N60N-Channel MOSFETFeatures 2. Drain High ruggednessBVDSS = 600V RDS(on) (Max 5.5 )@VGS=10V RDS(ON) = 5.5 ohm Gate Charge (Typical 15nC) 1. Gate Improved dv/dt Capability ID = 2.4A 100% Avalanche Tested3. Source General DescriptionTO-220FThis N-channel enhanceme

Datasheet: CEPF630 , CEBF630 , CS64N12 , CSN64N12 , D7509 , FD7509 , ID7509 , ED7509 , STP80NF70 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A .

History: IRF7210PBF | SSH6N70A | FCPF36N60NT | NCES075R026T

Keywords - DFF2N60 MOSFET datasheet

 DFF2N60 cross reference
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