All MOSFET. SUP60N06-18 Datasheet

 

SUP60N06-18 Datasheet and Replacement


   Type Designator: SUP60N06-18
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO-220AB
 

 SUP60N06-18 substitution

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SUP60N06-18 Datasheet (PDF)

 ..1. Size:100K  vishay
 sup60n06-18 sub60n06-18.pdf pdf_icon

SUP60N06-18

SUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.018 60TO-220ABDTO-263DRAIN connected to TAB GG D SG D STop ViewTop ViewSSUB60N06-18SUP60N06-18N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 60VVGate-Sourc

 4.1. Size:164K  vishay
 sup60n06-12p.pdf pdf_icon

SUP60N06-18

SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier

 6.1. Size:162K  vishay
 sup60n06.pdf pdf_icon

SUP60N06-18

SUP60N06-12PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition60 0.012 at VGS = 10 V60d 33 TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB Synchronous Rectifier

 7.1. Size:171K  vishay
 sup60n02.pdf pdf_icon

SUP60N06-18

SUP60N02-4m5PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0045 at VGS = 10 V60 100 % Rg Tested COMPLIANT 200.0065 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingTO-220ABDDRAIN connected to TABGG D STop

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Datasheet: D7509 , FD7509 , ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , 7N60 , SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 .

History: IRFH5025 | FDS86540 | HITJ0202MP | IRFPS3815PBF | SI3469DV | STD20NF06T4 | PTY88N07

Keywords - SUP60N06-18 MOSFET datasheet

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 SUP60N06-18 equivalent finder
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 SUP60N06-18 substitution
 SUP60N06-18 replacement

 

 
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