BLV1N60A Datasheet. Specs and Replacement

Type Designator: BLV1N60A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-92

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BLV1N60A datasheet

 ..1. Size:476K  belling
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BLV1N60A

BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle... See More ⇒

 7.1. Size:480K  belling
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BLV1N60A

BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o... See More ⇒

Detailed specifications: DFF2N60, NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, BLV108, BLV1N60, K4145, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, BLV7N60, BLV830

Keywords - BLV1N60A MOSFET specs

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