BLV1N60A MOSFET Datasheet: N-Ch, 600V, 0.5A. Full specification with pinout and replacement list

BLV1N60A Specs and Replacement

Type Designator: BLV1N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 19 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-92

BLV1N60A substitution

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BLV1N60A datasheet

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BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle... See More ⇒

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blv1n60.pdf pdf_icon

BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o... See More ⇒

Detailed specifications: DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , BLV108 , BLV1N60 , IRF2807 , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 , BLV7N60 , BLV830 .