All MOSFET. BLV1N60A Datasheet

 

BLV1N60A MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLV1N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-92

 BLV1N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLV1N60A Datasheet (PDF)

 ..1. Size:476K  belling
 blv1n60a.pdf

BLV1N60A BLV1N60A

BLV1N60A N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 15 Simple Drive Requirements ID 0.5ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle

 7.1. Size:480K  belling
 blv1n60.pdf

BLV1N60A BLV1N60A

BLV1N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 8 Simple Drive Requirements ID 1ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless o

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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