All MOSFET. BLV730 Datasheet

 

BLV730 Datasheet and Replacement


   Type Designator: BLV730
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

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BLV730 Datasheet (PDF)

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BLV730

BLV730 N-channel Enhancement Mode Power MOSFET 400V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.0 Simple Drive Requirements ID 5.5ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unles

Datasheet: SUB60N06-18 , BLV108 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , AO3401 , BLV740 , BLV7N60 , BLV830 , BLV840 , BLVP304 , BS107 , BS107AG , BS107ARL1 .

History: KO3423 | 2N6788U | HY3007M | IRL7486MTRPBF | PSA10N65C | STP130N6F7 | SUD08P06-155

Keywords - BLV730 MOSFET datasheet

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