All MOSFET. BLV740 Datasheet

 

BLV740 Datasheet and Replacement


   Type Designator: BLV740
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 63 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220
 

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BLV740 Datasheet (PDF)

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BLV740

BLV740 N-channel Enhancement Mode Power MOSFET 400V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.55 Simple Drive Requirements ID 10ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unles

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