All MOSFET. BLV7N60 Datasheet

 

BLV7N60 Datasheet and Replacement


   Type Designator: BLV7N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 170 nS
   Cossⓘ - Output Capacitance: 184 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220
 

 BLV7N60 substitution

   - MOSFET ⓘ Cross-Reference Search

 

BLV7N60 Datasheet (PDF)

 ..1. Size:466K  belling
 blv7n60.pdf pdf_icon

BLV7N60

BLV7N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.0 Simple Drive Requirements ID 7ADescription This advanced high voltage MOSFET is produced using Bellings proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless

Datasheet: BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 , RU6888R , BLV830 , BLV840 , BLVP304 , BS107 , BS107AG , BS107ARL1 , BS107ARL1G , BS107KL .

History: AOT280L

Keywords - BLV7N60 MOSFET datasheet

 BLV7N60 cross reference
 BLV7N60 equivalent finder
 BLV7N60 lookup
 BLV7N60 substitution
 BLV7N60 replacement

 

 
Back to Top

 


 
.