BLV7N60 Datasheet. Specs and Replacement

Type Designator: BLV7N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 184 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-220

  📄📄 Copy 

BLV7N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

BLV7N60 datasheet

 ..1. Size:466K  belling
 blv7n60.pdf pdf_icon

BLV7N60

BLV7N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.0 Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒

Detailed specifications: BLV1N60, BLV1N60A, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, 60N06, BLV830, BLV840, BLVP304, BS107, BS107AG, BS107ARL1, BS107ARL1G, BS107KL

Keywords - BLV7N60 MOSFET specs

 BLV7N60 cross reference

 BLV7N60 equivalent finder

 BLV7N60 pdf lookup

 BLV7N60 substitution

 BLV7N60 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility