BLV7N60 Specs and Replacement
Type Designator: BLV7N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 184 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
BLV7N60 substitution
- MOSFET ⓘ Cross-Reference Search
BLV7N60 datasheet
blv7n60.pdf
BLV7N60 N-channel Enhancement Mode Power MOSFET 600V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 1.0 Simple Drive Requirements ID 7A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless... See More ⇒
Detailed specifications: BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 , AO3400A , BLV830 , BLV840 , BLVP304 , BS107 , BS107AG , BS107ARL1 , BS107ARL1G , BS107KL .
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