BLV840 Specs and Replacement
Type Designator: BLV840
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220
BLV840 substitution
- MOSFET ⓘ Cross-Reference Search
BLV840 datasheet
blv840.pdf
BLV840 N-channel Enhancement Mode Power MOSFET 500V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.85 Simple Drive Requirements ID 8.0A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle... See More ⇒
Detailed specifications: BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 , BLV7N60 , BLV830 , STP65NF06 , BLVP304 , BS107 , BS107AG , BS107ARL1 , BS107ARL1G , BS107KL , BS107PSTOA , BS107PSTOB .
History: BS107ARL1G | BS107ARL1 | IRLB3813 | AP160N04P | BS107AG
Keywords - BLV840 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BS107ARL1G | BS107ARL1 | IRLB3813 | AP160N04P | BS107AG
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