BLV840 Datasheet. Specs and Replacement

Type Designator: BLV840  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220

  📄📄 Copy 

BLV840 substitution

- MOSFET ⓘ Cross-Reference Search

 

BLV840 datasheet

 ..1. Size:470K  belling
 blv840.pdf pdf_icon

BLV840

BLV840 N-channel Enhancement Mode Power MOSFET 500V DSS Avalanche Energy Specified BV Fast Switching RDS(ON) 0.85 Simple Drive Requirements ID 8.0A Description This advanced high voltage MOSFET is produced using Belling s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unle... See More ⇒

Detailed specifications: BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740, BLV7N60, BLV830, 2N60, BLVP304, BS107, BS107AG, BS107ARL1, BS107ARL1G, BS107KL, BS107PSTOA, BS107PSTOB

Keywords - BLV840 MOSFET specs

 BLV840 cross reference

 BLV840 equivalent finder

 BLV840 pdf lookup

 BLV840 substitution

 BLV840 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.