BSB008NE2LX Datasheet. Specs and Replacement
Type Designator: BSB008NE2LX 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47.2 nS
Cossⓘ - Output Capacitance: 3800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
Package: CANPAK
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BSB008NE2LX substitution
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BSB008NE2LX datasheet
bsb008ne2lx.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSB008NE2LX Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSB008NE2LX CanPAK MX-size 1 Description Features Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (... See More ⇒
Detailed specifications: BS170ZL1G, BS250CSM4, BS250FTA, BS250FTC, BS250KL-TR1-E3, BS250PSTOA, BS250PSTOB, BS250PSTZ, IRFB4227, BSB012N03LX3, BSB012NE2LXI, BSB013NE2LXI, BSB017N03LX3, BSB044N08NN3G, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G
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