All MOSFET. BSB008NE2LX Datasheet

 

BSB008NE2LX Datasheet and Replacement


   Type Designator: BSB008NE2LX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47.2 nS
   Cossⓘ - Output Capacitance: 3800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: CANPAK
 

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BSB008NE2LX Datasheet (PDF)

 ..1. Size:1465K  infineon
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BSB008NE2LX

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB008NE2LXData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB008NE2LXCanPAK MX-size1 DescriptionFeatures Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (

Datasheet: BS170ZL1G , BS250CSM4 , BS250FTA , BS250FTC , BS250KL-TR1-E3 , BS250PSTOA , BS250PSTOB , BS250PSTZ , AON6414A , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G .

History: H01N45A

Keywords - BSB008NE2LX MOSFET datasheet

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