BSB008NE2LX PDF Specs and Replacement
Type Designator: BSB008NE2LX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47.2 nS
Cossⓘ - Output Capacitance: 3800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
Package: CANPAK
BSB008NE2LX substitution
BSB008NE2LX PDF Specs
bsb008ne2lx.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSB008NE2LX Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSB008NE2LX CanPAK MX-size 1 Description Features Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (... See More ⇒
Detailed specifications: BS170ZL1G , BS250CSM4 , BS250FTA , BS250FTC , BS250KL-TR1-E3 , BS250PSTOA , BS250PSTOB , BS250PSTZ , IRFB4227 , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
