All MOSFET. BSB008NE2LX Datasheet

 

BSB008NE2LX Datasheet and Replacement


   Type Designator: BSB008NE2LX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 46 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 47.2 nS
   Cossⓘ - Output Capacitance: 3800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0008 Ohm
   Package: CANPAK
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BSB008NE2LX Datasheet (PDF)

 ..1. Size:1465K  infineon
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BSB008NE2LX

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB008NE2LXData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB008NE2LXCanPAK MX-size1 DescriptionFeatures Optimized for e-fuse and OR-ing application Ultra low Rdson in CanPAK-MX footprint Low profile (

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LSF65R570GT | CSD16342Q5A

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