BSB044N08NN3G PDF and Equivalents Search

 

BSB044N08NN3G PDF Specs and Replacement


   Type Designator: BSB044N08NN3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: MG-WDSON-2
 

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BSB044N08NN3G PDF Specs

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BSB044N08NN3G

BSB044N08NN3 G OptiMOS 3 Power-MOSFET Product Summary Features VDS 80 V Optimized technology for DC/DC converters RDS(on),max 4.4 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Superior thermal resistance CanPAKTM M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (... See More ⇒

Detailed specifications: BS250PSTOA , BS250PSTOB , BS250PSTZ , BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , 2N7000 , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS .

History: 2SJ411 | BRGN250N65YK

Keywords - BSB044N08NN3G MOSFET specs

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History: 2SJ411 | BRGN250N65YK

BSB044N08NN3G  BSB044N08NN3G  BSB044N08NN3G 

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