All MOSFET. BSB044N08NN3G Datasheet

 

BSB044N08NN3G Datasheet and Replacement


   Type Designator: BSB044N08NN3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: MG-WDSON-2
 

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BSB044N08NN3G Datasheet (PDF)

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BSB044N08NN3G

BSB044N08NN3 GOptiMOS3 Power-MOSFETProduct SummaryFeaturesVDS 80 V Optimized technology for DC/DC convertersRDS(on),max 4.4mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Superior thermal resistanceCanPAKTM M Dual sided coolingMG-WDSON-2 low parasitic inductance Low profile (

Datasheet: BS250PSTOA , BS250PSTOB , BS250PSTZ , BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , IRF9540 , BSB056N10NN3G , BSB104N08NP3G , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS .

History: SWI8N65D

Keywords - BSB044N08NN3G MOSFET datasheet

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