BSB044N08NN3G Datasheet. Specs and Replacement
Type Designator: BSB044N08NN3G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: MG-WDSON-2
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BSB044N08NN3G substitution
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BSB044N08NN3G datasheet
bsb044n08nn3g.pdf
BSB044N08NN3 G OptiMOS 3 Power-MOSFET Product Summary Features VDS 80 V Optimized technology for DC/DC converters RDS(on),max 4.4 mW Excellent gate charge x R product (FOM) DS(on) ID 90 A Superior thermal resistance CanPAKTM M Dual sided cooling MG-WDSON-2 low parasitic inductance Low profile (... See More ⇒
Detailed specifications: BS250PSTOA, BS250PSTOB, BS250PSTZ, BSB008NE2LX, BSB012N03LX3, BSB012NE2LXI, BSB013NE2LXI, BSB017N03LX3, 2N7000, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I, BSC010N04LS
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