BSB056N10NN3G MOSFET Datasheet: N-Ch, 100V, 9A. Full specification with pinout and replacement list

BSB056N10NN3G Specs and Replacement

Type Designator: BSB056N10NN3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm

Package: MG-WDSON-2

BSB056N10NN3G substitution

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BSB056N10NN3G datasheet

..1. Size:1665K infineon
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n-Channel Power MOSFET OptiMOS BSB056N10NN3 G Data Sheet 2.5, 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make... See More ⇒

9.1. Size:561K infineon
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Detailed specifications: BS250PSTOB, BS250PSTZ, BSB008NE2LX, BSB012N03LX3, BSB012NE2LXI, BSB013NE2LXI, BSB017N03LX3, BSB044N08NN3G, P55NF06, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I, BSC010N04LS, BSC010N04LSI