All MOSFET. BSB056N10NN3G Datasheet

 

BSB056N10NN3G Datasheet and Replacement


   Type Designator: BSB056N10NN3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: MG-WDSON-2
 

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BSB056N10NN3G Datasheet (PDF)

 ..1. Size:1665K  infineon
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BSB056N10NN3G

n-Channel Power MOSFETOptiMOSBSB056N10NN3 G Data Sheet2.5, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB056N10NN3 G1 DescriptionOptiMOS100V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.1. Size:561K  infineon
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BSB056N10NN3G

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Datasheet: BS250PSTOB , BS250PSTZ , BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , IRFB4115 , BSB104N08NP3G , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI .

History: SM6008NF | HAT2174N | AP60SL600AIN | DH045N06E | 2SK1813

Keywords - BSB056N10NN3G MOSFET datasheet

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