All MOSFET. BSB056N10NN3G Datasheet

 

BSB056N10NN3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSB056N10NN3G
   Marking Code: 0110'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 56 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: MG-WDSON-2

 BSB056N10NN3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSB056N10NN3G Datasheet (PDF)

 ..1. Size:1665K  infineon
 bsb056n10nn3g.pdf

BSB056N10NN3G BSB056N10NN3G

n-Channel Power MOSFETOptiMOSBSB056N10NN3 G Data Sheet2.5, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB056N10NN3 G1 DescriptionOptiMOS100V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.1. Size:561K  infineon
 bsb053n03lp.pdf

BSB056N10NN3G BSB056N10NN3G

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT6011B2VR | KMB3D5N40SA

 

 
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