All MOSFET. BSB056N10NN3G Datasheet

 

BSB056N10NN3G Datasheet and Replacement


   Type Designator: BSB056N10NN3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: MG-WDSON-2
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BSB056N10NN3G Datasheet (PDF)

 ..1. Size:1665K  infineon
 bsb056n10nn3g.pdf pdf_icon

BSB056N10NN3G

n-Channel Power MOSFETOptiMOSBSB056N10NN3 G Data Sheet2.5, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB056N10NN3 G1 DescriptionOptiMOS100V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

 9.1. Size:561K  infineon
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BSB056N10NN3G

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: AONR32320C | DH150N12B | 12N65KG-TF1-T | QM6008S | R5016ANJ | BSB280N15NZ3G | ELM13401CA

Keywords - BSB056N10NN3G MOSFET datasheet

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