All MOSFET. BSB104N08NP3G Datasheet

 

BSB104N08NP3G Datasheet and Replacement


   Type Designator: BSB104N08NP3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: MG-WDSON-2
 

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BSB104N08NP3G Datasheet (PDF)

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BSB104N08NP3G

BSB104N08NP3 G OptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 80 V Optimized technology for DC/DC convertersRDS(on),max 10.4 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Low profile (

Datasheet: BS250PSTZ , BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , 2SK3878 , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI .

History: IXTQ180N055T | SPP03N60C3 | SI4825DY | CJQ4406 | TSM2312CX | 2N7002NXBK | IPD50N04S4-08

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