BSB104N08NP3G PDF and Equivalents Search

 

BSB104N08NP3G PDF Specs and Replacement


   Type Designator: BSB104N08NP3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: MG-WDSON-2
 

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BSB104N08NP3G PDF Specs

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BSB104N08NP3G

BSB104N08NP3 G OptiMOS 3 Power-MOSFET Product Summary Features VDS 80 V Optimized technology for DC/DC converters RDS(on),max 10.4 mW Excellent gate charge x R product (FOM) DS(on) ID 50 A Low profile (... See More ⇒

Detailed specifications: BS250PSTZ , BSB008NE2LX , BSB012N03LX3 , BSB012NE2LXI , BSB013NE2LXI , BSB017N03LX3 , BSB044N08NN3G , BSB056N10NN3G , 8205A , BSB165N15NZ3G , BSB280N15NZ3G , BSC009NE2LS , BSC009NE2LS5 , BSC009NE2LS5I , BSC010N04LS , BSC010N04LSI , BSC010NE2LSI .

History: STD3N30L-1 | 2SJ314-01S | 2SJ280L | PHP4ND40E | 2SJ606-S | P0765GTFS | DP3080

Keywords - BSB104N08NP3G MOSFET specs

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