BSC009NE2LS5 Datasheet and Replacement

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC009NE2LS5ISuperSO81 Description5867Features7685 Optimized for high performance buck converters Monolithic integrated Schottky like diode Very low on

BSC009NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for e-fuse and ORing applicationRDS(on),max 0.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 38 nC Superior thermal resistanceQG(0V..10V) 126 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8 P

BSC007N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2