BSC016N06NS Datasheet. Specs and Replacement
Type Designator: BSC016N06NS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: PG-TDSON-8
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BSC016N06NS substitution
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BSC016N06NS datasheet
bsc016n06ns.pdf
BSC016N06NS OptiMOSTM Power-MOSFET Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.6 mW 100% avalanche tested ID 100 A Superior thermal resistance QOSS 81 nC N-channel QG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications PG-TDSON-8 FL Pb-free lead plating; RoHS compliant enlarged source ... See More ⇒
bsc016n06nst.pdf
BSC016N06NST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 60 V 8 7 6 Features 5 Optimized for synchronous rectification 175 C rated 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 3 Pb-free lead plating; RoHS compliant 2 1 ... See More ⇒
Detailed specifications: BSC014N03LS, BSC014N03MS, BSC014N04LS, BSC014N04LSI, BSC014N06NS, BSC014NE2LSI, BSC016N03LS, BSC016N03MS, K4145, BSC018NE2LSI, BSC019N02KS, BSC019N04LS, BSC020N03LS, BSC020N03MS, BSC022N04LS, BSC025N03LS, BSC025N03MS
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