BSC016N06NS MOSFET. Datasheet pdf. Equivalent

BSC016N06NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQOSS 81 nC N-channelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applicationsPG-TDSON-8 FL Pb-free lead plating; RoHS compliantenlarged source

BSC016N06NSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 60 V876Features5 Optimized for synchronous rectification 175 C rated1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications3 Pb-free lead plating; RoHS compliant 21

BSC016N04LS GOptiMOS3 Power-TransistorProduct SummaryV 40 VFeatures DSR 1.6m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

& " & E $;B1= !#& '$=;0@/? &@99-=DFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*- 1 m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6=Q &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2

% ! % # %?88, G D ON S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product