BSC019N04LS Datasheet. Specs and Replacement
Type Designator: BSC019N04LS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 840 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: PG-TDSON-8
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BSC019N04LS substitution
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BSC019N04LS datasheet
bsc019n04ls.pdf
BSC019N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 37 nC Superior thermal resistance QG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒
bsc019n04ns.pdf
BSC019N04NS www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET 40 38 nC 0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS Tested APPLICATIONS Synchronous Rectification Secondary Side DC/DC D ... See More ⇒
Detailed specifications: BSC014N04LSI, BSC014N06NS, BSC014NE2LSI, BSC016N03LS, BSC016N03MS, BSC016N06NS, BSC018NE2LSI, BSC019N02KS, 12N60, BSC020N03LS, BSC020N03MS, BSC022N04LS, BSC025N03LS, BSC025N03MS, BSC026N02KS, BSC026N04LS, BSC026N08NS5
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