BSC019N04LS MOSFET. Datasheet pdf. Equivalent

   Type Designator: BSC019N04LS
   Marking Code: 019N04LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: PG-TDSON-8

BSC019N04LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BSC019N04LS Datasheet (PDF)

..1. Size:526K infineon
bsc019n04ls.pdf

BSC019N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 1.9 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 37 nC Superior thermal resistanceQG(0V..10V) 41 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

5.1. Size:377K infineon
bsc019n04nsg.pdf

BSC019N04NS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 1.9mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

5.2. Size:3484K cn vbsemi
bsc019n04ns.pdf

BSC019N04NSwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET40 38 nC0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Synchronous Rectification Secondary Side DC/DCD

6.1. Size:663K infineon
bsc019n02ks.pdf