BSC026NE2LS5 Datasheet. Specs and Replacement

Type Designator: BSC026NE2LS5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: PG-TDSON-8

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BSC026NE2LS5 datasheet

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BSC026NE2LS5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 V DS(on) GS 100% ava... See More ⇒

 7.1. Size:1182K  infineon
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BSC026NE2LS5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t... See More ⇒

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BSC026NE2LS5

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BSC026NE2LS5

BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

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Detailed specifications: BSC020N03LS, BSC020N03MS, BSC022N04LS, BSC025N03LS, BSC025N03MS, BSC026N02KS, BSC026N04LS, BSC026N08NS5, STP80NF70, BSC028N06NS, BSC030N03LS, BSC030N03MS, BSC030N08NS5, BSC032N04LS, BSC032NE2LS, BSC034N03LS, BSC034N06NS

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