BSC030N08NS5 Datasheet and Replacement
Type Designator: BSC030N08NS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PG-TDSON-8
BSC030N08NS5 substitution
BSC030N08NS5 Datasheet (PDF)
bsc030n08ns5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5Data SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
bsc030n03ls .pdf

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bsc030n04nsg.pdf

BSC030N04NS GOptiMOS3 Power-Transistor Product SummaryV 40 VFeatures DSR 3.0m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsc030n03lsg.pdf

BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
Datasheet: BSC025N03MS , BSC026N02KS , BSC026N04LS , BSC026N08NS5 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS , 18N50 , BSC032N04LS , BSC032NE2LS , BSC034N03LS , BSC034N06NS , BSC035N10NS5 , BSC036NE7NS3G , BSC037N08NS5 , BSC039N06NS .
History: NVMTS0D6N04C
Keywords - BSC030N08NS5 MOSFET datasheet
BSC030N08NS5 cross reference
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History: NVMTS0D6N04C



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