SI3812DV Specs and Replacement
Type Designator: SI3812DV
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TSOP6
SI3812DV substitution
- MOSFET ⓘ Cross-Reference Search
SI3812DV datasheet
si3812dv.pdf
Si3812DV Vishay Siliconix N-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.125 at VGS = 4.5 V 2.4 LITTLE FOOT Plus 20 0.200 at VGS = 2.5 V 1.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF... See More ⇒
Detailed specifications: SFW9630, SFW9634, SFW9640, SFW9644, SFW9Z14, SFW9Z24, SFW9Z34, SI3443DVPBF, IRFP260, SI3851DV, SI3853DV, SI4410DY, SI4435DY, SI4810DY, SI4812DY, SI4816DY, SI4818DY
Keywords - SI3812DV MOSFET specs
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