All MOSFET. SI3812DV Datasheet

 

SI3812DV Datasheet and Replacement


   Type Designator: SI3812DV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TSOP6
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SI3812DV Datasheet (PDF)

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SI3812DV

Si3812DVVishay SiliconixN-Channel 20 V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = 4.5 V 2.4 LITTLE FOOT Plus200.200 at VGS = 2.5 V 1.8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY VF (V)VKA (V) IF

Datasheet: SFW9630 , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443DVPBF , IRLB4132 , SI3851DV , SI3853DV , SI4410DY , SI4435DY , SI4810DY , SI4812DY , SI4816DY , SI4818DY .

History: SI2301DS-T1-GE3 | NP100N055NDH | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - SI3812DV MOSFET datasheet

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