BSC0923NDI MOSFET Datasheet: N-Ch, 30V, 10A. Full specification with pinout and replacement list

BSC0923NDI Specs and Replacement

Type Designator: BSC0923NDI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: PG-TISON-8

BSC0923NDI substitution

- MOSFET ⓘ Cross-Reference Search

BSC0923NDI datasheet

..1. Size:690K infineon
bsc0923ndi.pdf pdf_icon

BSC0923NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 2.8 mW Logic level (4.5V rated) VGS=4.5 V 7 3.7 100% avalanche tested ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; R... See More ⇒

8.1. Size:586K infineon
bsc0925nd.pdf pdf_icon

BSC0925ND OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Dual N-channel OptiMOS MOSFET RDS(on),max 5 mW Optimized for clean switching ID 40 A 100% avalanche tested QOSS 8.6 nC Superior thermal resistance QG(0V..10V) 13 nC Optimized for high performance Buck converter Qualified according to JEDEC1) for target applications VPhase ... See More ⇒

8.2. Size:693K infineon
bsc0921ndi.pdf pdf_icon

BSC0921NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Optimized for high performance Buck converter RDS(on),max VGS=10 V 5 1.6 mW Logic level (4.5V rated) VGS=4.5 V 7 2.1 N-channel ID 40 40 A Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant... See More ⇒

8.3. Size:685K infineon
bsc0924ndi.pdf pdf_icon

BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Integrated monolithic Schottky-like diode RDS(on),max VGS=10 V 5 3.7 mW Optimized for high performance Buck converter VGS=4.5 V 7 5.2 Logic level (4.5V rated) ID 40 40 A 100% avalanche tested Qualified according to JEDEC1) for tar... See More ⇒

Detailed specifications: BSC080N03LS, BSC080N03MS, BSC0901NSI, BSC0902NSI, BSC0904NSI, BSC0910NDI, BSC0911ND, BSC0921NDI, AOD4184A, BSC0924NDI, BSC0925ND, BSC097N06NS, BSC098N10NS5, BSC100N03MS, BSC117N08NS5, BSC120N03LS, BSC120N03MS