BSC500N20NS3G PDF and Equivalents Search

 

BSC500N20NS3G Specs and Replacement

Type Designator: BSC500N20NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: PG-TDSON-8

BSC500N20NS3G substitution

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BSC500N20NS3G datasheet

 ..1. Size:540K  infineon
 bsc500n20ns3g.pdf pdf_icon

BSC500N20NS3G

BSC500N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max 50 mW Excellent gate charge x R product (FOM) DS(on) ID 24 A Very low on-resistance R DS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for ... See More ⇒

Detailed specifications: BSC097N06NS, BSC098N10NS5, BSC100N03MS, BSC117N08NS5, BSC120N03LS, BSC120N03MS, BSC150N03LD, BSC252N10NSF, IRF540N, BSD214SN, BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ

Keywords - BSC500N20NS3G MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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