All MOSFET. BSC500N20NS3G Datasheet

 

BSC500N20NS3G Datasheet and Replacement


   Type Designator: BSC500N20NS3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: PG-TDSON-8
 

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BSC500N20NS3G Datasheet (PDF)

 ..1. Size:540K  infineon
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BSC500N20NS3G

BSC500N20NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 200 V N-channel, normal levelRDS(on),max 50 mW Excellent gate charge x R product (FOM)DS(on)ID 24 A Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for

Datasheet: BSC097N06NS , BSC098N10NS5 , BSC100N03MS , BSC117N08NS5 , BSC120N03LS , BSC120N03MS , BSC150N03LD , BSC252N10NSF , IRF540N , BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ .

History: JMSL0602AGQ

Keywords - BSC500N20NS3G MOSFET datasheet

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