BSD214SN Specs and Replacement
Type Designator: BSD214SN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 46 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT-363
BSD214SN substitution
- MOSFET ⓘ Cross-Reference Search
BSD214SN datasheet
bsd214sn.pdf
BSD214SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =4.5 V 140 m DS(on),max GS Enhancement mode V =2.5 V 250 GS Super Logic level (2.5V rated) I 1.5 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type... See More ⇒
Detailed specifications: BSC098N10NS5, BSC100N03MS, BSC117N08NS5, BSC120N03LS, BSC120N03MS, BSC150N03LD, BSC252N10NSF, BSC500N20NS3G, IRF540, BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G
Keywords - BSD214SN MOSFET specs
BSD214SN cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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