All MOSFET. BSD214SN Datasheet

 

BSD214SN Datasheet and Replacement


   Type Designator: BSD214SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT-363
 

 BSD214SN substitution

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BSD214SN Datasheet (PDF)

 ..1. Size:177K  infineon
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BSD214SN

BSD214SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 140mDS(on),max GS Enhancement modeV =2.5 V 250GS Super Logic level (2.5V rated)I 1.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant654 Halogen-free according to IEC61249-2-21123Type

Datasheet: BSC098N10NS5 , BSC100N03MS , BSC117N08NS5 , BSC120N03LS , BSC120N03MS , BSC150N03LD , BSC252N10NSF , BSC500N20NS3G , IRF540 , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G .

History: IRF135B203 | VST018N10MS

Keywords - BSD214SN MOSFET datasheet

 BSD214SN cross reference
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