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BSD840N Specs and Replacement

Type Designator: BSD840N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: SOT-363

BSD840N substitution

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BSD840N datasheet

 ..1. Size:183K  infineon
 bsd840n.pdf pdf_icon

BSD840N

BSD840N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS Dual N-channel R V =2.5 V 400 m DS(on),max GS Enhancement mode V =1.8 V 560 GS Ultra Logic level (1.8V rated) I 0.88 A D Avalanche rated PG-SOT-363 Qualified according to AEC Q101 6 5 4 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 1 2 3... See More ⇒

Detailed specifications: BSC150N03LD, BSC252N10NSF, BSC500N20NS3G, BSD214SN, BSD235C, BSD235N, BSD316SN, BSD816SN, IRF1404, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI, BSH111BK

Keywords - BSD840N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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