All MOSFET. BSD840N Datasheet

 

BSD840N Datasheet and Replacement


   Type Designator: BSD840N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-363
 

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BSD840N Datasheet (PDF)

 ..1. Size:183K  infineon
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BSD840N

BSD840NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS Dual N-channelR V =2.5 V 400mDS(on),max GS Enhancement modeV =1.8 V 560GS Ultra Logic level (1.8V rated)I 0.88 AD Avalanche ratedPG-SOT-363 Qualified according to AEC Q101654 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123

Datasheet: BSC150N03LD , BSC252N10NSF , BSC500N20NS3G , BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , IRF1404 , BSF030NE2LQ , BSF035NE2LQ , BSF077N06NT3G , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI , BSH111BK .

History: STS6604L

Keywords - BSD840N MOSFET datasheet

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