BSD840N MOSFET. Datasheet pdf. Equivalent
Type Designator: BSD840N
Marking Code: XBs
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.75 V
|Id|ⓘ - Maximum Drain Current: 0.88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.26 nC
trⓘ - Rise Time: 2.2 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: SOT-363
BSD840N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSD840N Datasheet (PDF)
..1. Size:183K infineon
bsd840n.pdf
bsd840n.pdf
BSD840NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS Dual N-channelR V =2.5 V 400mDS(on),max GS Enhancement modeV =1.8 V 560GS Ultra Logic level (1.8V rated)I 0.88 AD Avalanche ratedPG-SOT-363 Qualified according to AEC Q101654 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
