All MOSFET. BSF030NE2LQ Datasheet

 

BSF030NE2LQ Datasheet and Replacement


   Type Designator: BSF030NE2LQ
   Marking Code: 03E2'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.3 nC
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: MG-WDSON-2
 

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BSF030NE2LQ Datasheet (PDF)

 ..1. Size:1522K  infineon
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BSF030NE2LQ

n-Channel Power MOSFETOptiMOSBSF030NE2LQ Data Sheet2.3, 2011-09-19Final Industrial & MultimarketOptiMOS Power-MOSFETBSF030NE2LQ1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

 9.1. Size:864K  infineon
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BSF030NE2LQ

BSF035NE2LQOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converterRDS(on),max 3.5 mW Low parasitic inductanceID 69 A Low profile (

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP40P03GI-HF

Keywords - BSF030NE2LQ MOSFET datasheet

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