All MOSFET. BSF077N06NT3G Datasheet

 

BSF077N06NT3G Datasheet and Replacement


   Type Designator: BSF077N06NT3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: MG-WDSON-2
 

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BSF077N06NT3G Datasheet (PDF)

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BSF077N06NT3G

n-Channel Power MOSFETOptiMOSBSF077N06NT3 G Data Sheet1.4, 2011-03-01Preliminary Industrial & MultimarketOptiMOS Power-MOSFETBSF077N06NT3 G1 DescriptionOptiMOS60V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages

Datasheet: BSD214SN , BSD235C , BSD235N , BSD316SN , BSD816SN , BSD840N , BSF030NE2LQ , BSF035NE2LQ , IRF630 , BSF134N10NJ3G , BSF450NE7NH3 , BSG0811ND , BSG0813NDI , BSH111BK , BSH112 , BSH205G2 , BSL202SN .

History: UT9435HG-AA3-R | SL19N120A | MPSH65M260 | BLP039N08-D | SWN5N70K | PMDPB56XNEA | G1816

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