BSF077N06NT3G PDF and Equivalents Search

 

BSF077N06NT3G Specs and Replacement

Type Designator: BSF077N06NT3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm

Package: MG-WDSON-2

BSF077N06NT3G substitution

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BSF077N06NT3G datasheet

 ..1. Size:1602K  infineon
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BSF077N06NT3G

n-Channel Power MOSFET OptiMOS BSF077N06NT3 G Data Sheet 1.4, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS Power-MOSFET BSF077N06NT3 G 1 Description OptiMOS 60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages... See More ⇒

Detailed specifications: BSD214SN, BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ, IRF640N, BSF134N10NJ3G, BSF450NE7NH3, BSG0811ND, BSG0813NDI, BSH111BK, BSH112, BSH205G2, BSL202SN

Keywords - BSF077N06NT3G MOSFET specs

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