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BSF134N10NJ3G Specs and Replacement

Type Designator: BSF134N10NJ3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0134 Ohm

Package: MG-WDSON-2

BSF134N10NJ3G substitution

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BSF134N10NJ3G datasheet

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BSF134N10NJ3G

n-Channel Power MOSFET OptiMOS BSF134N10NJ3 G Data Sheet 2.6, 2014-01-10 Final Industrial & Multimarket OptiMOS Power-MOSFET BSF134N10NJ3 G 1 Description OptiMOS 100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒

Detailed specifications: BSD235C, BSD235N, BSD316SN, BSD816SN, BSD840N, BSF030NE2LQ, BSF035NE2LQ, BSF077N06NT3G, IRFP260N, BSF450NE7NH3, BSG0811ND, BSG0813NDI, BSH111BK, BSH112, BSH205G2, BSL202SN, BSL205N

Keywords - BSF134N10NJ3G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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