All MOSFET. BSL205N Datasheet

 

BSL205N Datasheet and Replacement


   Type Designator: BSL205N
   Marking Code: sPK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.1 nC
   tr ⓘ - Rise Time: 2.9 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT-457
 
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BSL205N Datasheet (PDF)

 ..1. Size:427K  infineon
 bsl205n.pdf pdf_icon

BSL205N

BSL205NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

 9.1. Size:360K  infineon
 bsl207sp.pdf pdf_icon

BSL205N

Rev. 2.05BSL207SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 41 m Enhancement modeID -6 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated435 Pb-free lead plating; RoHS compliant 261 QualifiedaccordingtoAECQ101 P-TS

 9.2. Size:415K  infineon
 bsl207n.pdf pdf_icon

BSL205N

BSL207NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

 9.3. Size:218K  infineon
 bsl202sn.pdf pdf_icon

BSL205N

BSL202SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 22mDS(on),max GS Enhancement modeV =2.5 V 36GS Super Logic level (2.5V rated)I 7.5 AD Avalanche rated dv /dt ratedTSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Inf

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Keywords - BSL205N MOSFET datasheet

 BSL205N cross reference
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