BSL207N
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSL207N
Marking Code: sPL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 2.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.1
nC
trⓘ - Rise Time: 2.8
nS
Cossⓘ -
Output Capacitance: 114
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
SOT-457
BSL207N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSL207N
Datasheet (PDF)
..1. Size:415K infineon
bsl207n.pdf
BSL207NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7
8.1. Size:360K infineon
bsl207sp.pdf
Rev. 2.05BSL207SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 41 m Enhancement modeID -6 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated435 Pb-free lead plating; RoHS compliant 261 QualifiedaccordingtoAECQ101 P-TS
9.1. Size:427K infineon
bsl205n.pdf
BSL205NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7
9.2. Size:218K infineon
bsl202sn.pdf
BSL202SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 22mDS(on),max GS Enhancement modeV =2.5 V 36GS Super Logic level (2.5V rated)I 7.5 AD Avalanche rated dv /dt ratedTSOP-6 Pb-free lead plating; RoHS compliant65 Qualified according to AEC Q1014123Type Package Tape and Reel Inf
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